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Complementary

Part No.

Configuration

Product parameters

Package

BVDSS(V)

VGSS(V)

ID(A)

VGS(TH)(V)

RDS(ON) (mΩ@4V5) Typ

SSC8631GS1

N

30

±20

7

1~3

35

SOP8

P

-30

±20

-6.5

-1~-3

39

BJT

Part No.

Configuration

Product parameters

Package

BVCEO(V)

BVEBO(V)

IC(A)

VCE(sat)(mV)

HFE

SSCP005GSB

PNP BJT

VCEO=-30V;

VCBO=-20V

VCESAT=-500mV;

IC=-1.5A

hfe=200

SOT23-6

SSCP005GN3

PNP BJT

VCEO=-30V;

VCBO=-40V

VCESAT=-500mV;

IC=-1.5A

hfe=200

SOT23-6

MOSFET+Schottky

Part No.

Configuration

Product parameters

Package

BVDSS(V)

VGSS(V)

ID(A)

VGS(TH)(V)

RDS(ON) (mΩ@4V5) Typ

VR(V)

VF@IF(MAX)(V)Typ

IO(AV)(A)

IR@VR(MAX)(uA)

SSC8K21GN3

P

-20

±8

-0.3

0.35~1

105

DFN3X2

Schottky

20

0.41

1

35

SSC8K23GN2

P

-20

±8

-0.3

0.35~1

60

DFN2X2

Schottky

20

0.41

2

15

MOSFET＋BJT

Part No.

Configuration

Product parameters

Package

BVDSS(V)

VGSS(V)

ID(A)

VGS(TH)(V)

RDS(ON) (mΩ@4V5) Typ

BVCEO(V)

BVEBO(V)

IC(A)

VCE(sat)(mV)

HFE

SSC8P22AN3

N

20

±12

0.3

0.35~1

255

DFN3X2

PNP

-40

-6

-3

-200

300

SSC8P22CN2

N

20

±12

0.3

0.35~1

255

DFN2X2

PNP

-40

-6

-3

-200

300

SSC8P20AN2

N

20

±8

0.3

0.35~1

255

DFN2X2

PNP

-20

-6

-1

-500

300